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US Patent Issued to ASM IP Holding on July 21 for "Methods and systems for filling a gap" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,399, issued on July 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods and systems for filling a gap" was invented by ... और पढ़ें


US Patent Issued to Versum Materials US on July 21 for "Composition and methods using same for carbon doped silicon containing films" (South Korean, American, Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,400, issued on July 21, was assigned to Versum Materials US LLC (Tempe, Ariz.). "Composition and methods using same for carbon doped silico... और पढ़ें


US Patent Issued to Resonac on July 21 for "Etching gas, etching method, and method for producing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,401, issued on July 21, was assigned to Resonac Corp. (Tokyo). "Etching gas, etching method, and method for producing semiconductor device"... और पढ़ें


US Patent Issued to CENTRAL GLASS on July 21 for "Surface treatment method, dry etching method, cleaning method, production method for semiconductor device, and etching device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,402, issued on July 21, was assigned to CENTRAL GLASS COMPANY Ltd. (Yamaguchi, Japan). "Surface treatment method, dry etching method, clean... और पढ़ें


US Patent Issued to Applied Materials on July 21 for "Halogen-free etching of silicon nitride" (California Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,403, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Halogen-free etching of silicon nitride" was invente... और पढ़ें


US Patent Issued to Applied Materials on July 21 for "Methods of selectively etching silicon nitride" (Singaporean, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,404, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods of selectively etching silicon nitride" was ... और पढ़ें


US Patent Issued to Applied Materials on July 21 for "Purge system to clean wafer backside for ring susceptor" (California Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,405, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Purge system to clean wafer backside for ring suscep... और पढ़ें


US Patent Issued to Applied Materials on July 21 for "Spacer patterning process with flat top profile" (California Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,406, issued on July 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Spacer patterning process with flat top profile" was... और पढ़ें


US Patent Issued to SEMES, SAMSUNG ELECTRONICS on July 21 for "Apparatus and method for processing substrate" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,407, issued on July 21, was assigned to SEMES Co. LTD. (Cheonan-si, South Korea) and SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). ... और पढ़ें


US Patent Issued to KIOXIA on July 21 for "Substrate processing apparatus and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,408, issued on July 21, was assigned to KIOXIA Corp. (Tokyo). "Substrate processing apparatus and method for manufacturing semiconductor de... और पढ़ें